返回

SYD1565SL: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
Package:TO-220F\nVCE(SAT)@typ.Tj=25°C: 1.8\nVGEth@typ.Tj=25°C: 6.0\nDetails: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions.\n\n*For English specifications, please contact us.




![[SYD1565SL] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/650285_471233.png)