Technical Advantages Of IPM Products
The IPM products of SHYSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.
SYIM756-SFT: SHYSEMI's Flagship IPM Solution
- Proprietary 7-channel HVIC with enhanced noise immunity.
- Independent Trench FS IGBT for inverter/PFC PWM applications.
- IMS substrate withstands >6000V insulation voltage.
- Japanese low-CTE package: 1.7W/m·K thermal conductivity, Tg ≥180°C.
Four IPM Technologies
The IPM products of SHYSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.
IGBT
- Design of grooved strip grating
- Field board and lateral variable doping terminal
- Field cutoff technology
- Design switch speed matching for inverter and PFC PWM frequencies separately
Drive IC
- Integrated bootstrap circuit
- Integrated PFC driver circuit
- Integrated PFC protection circuit
- Detection port anti-interference design
- Good match with independently developed IGBT
IMS
- High thermal resistance, high TC passivation layer material
- Anodic oxidation process
- Low EMl busbar design
- Design of anti-interferencegrounding wire
- Anti layering technology
EMC
- Various shapes and particle sizes of Al2O3 filling
- High TG plastic sealing material
- Matching of Linear Thermal
- Expansion Coefficient with Substrateand Chip Materials
- Techniques for increasing fluidityand reducing viscosity
Technical Advantages Of Chips
SHYSEMI's IGBT chips are independently designed using the 6th generation Trench Field process. They have developed 1200V (75A-300A) chips and corresponding FRD series products, as well as 1700V (150A/200A) series products. The performance of these products ranks at the forefront of the industry, and the 1700V series has reached the leading level in China.
SHYSEMI’s Core Strengths Of Chips
- Tape-out conducted at the world’s third-largest wafer fab (Huahong Group).
- Chips utilize SHYSEMI's proprietary 6th-generation Trench Field technology.
- Enables operating voltage increase from 1200V to 1700V within the same die size.
- Vcesat coefficient is notably lower than domestic counterparts.
- Wafer-level CP test data provided.
- Supports customer-customized chip development.
SHYSEMI VS INFINEON
After we compared the test data of SHYSEMI's chips with that of Infineon, we found that many of the data were on par with the top brands in this industry. Therefore, SHYSEI's chips will be an excellent alternative product.
