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SYD2065SLB: 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode
Package：TO-220F\nVCE(SAT)@typ.Tj=25°C: 1.7\nVGEth@typ.Tj=25°C: 5.5\nDetails: SYD2065SLA/SLP/SLB/SLD 650V 20A IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor control and power supply semiconductor solutions.\n\n*For English specifications, please contact us.
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Applications:
- UPS
- PFC
- Motor Control
Features:
- Saturation Voltage Drop: Positive Temperature Coefficient
- Easy to Use in Parallel Circuits
- Low Switching Loss
- Built-in Fast Recovery Diode
- High Reliability and Thermal Stability
- Good Parameter Consistency
![[SYD2065SLB] 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/421401_927291.png)
Package Dimension Diagram:
![[SYD2065SLB] 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/426588_23113.png)